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1. product pro?le 1.1 general description pnp low v cesat breakthrough in small signal (biss) transistor and npn resistor- equipped transistor (ret) in a sot457 (sc-74) small surface-mounted device (smd) plastic package. 1.2 features n low v cesat (biss) and resistor-equipped transistor in one package n low threshold voltage (<1 v) compared to mosfet n space-saving solution n reduction of component count n aec-q101 quali?ed 1.3 applications n supply line switches n battery charger switches n high-side switches for leds, drivers and backlights n portable equipment 1.4 quick reference data [1] pulse test: t p 300 m s; d 0.02. PBLS6024D 60 v, 1.5 a pnp biss loadswitch rev. 01 14 august 2009 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit tr1; pnp low v cesat transistor v ceo collector-emitter voltage open base - - - 60 v i c collector current - - - 1.5 a i cm peak collector current single pulse; t p 1ms -- - 3a r cesat collector-emitter saturation resistance i c = - 1.5 a; i b = - 100 ma [1] - 110 175 m w tr2; npn resistor-equipped transistor v ceo collector-emitter voltage open base - - 50 v i o output current - - 100 ma r1 bias resistor 1 (input) 15.4 22 28.6 k w r2/r1 bias resistor ratio 0.8 1 1.2
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 2 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch 2. pinning information 3. ordering information 4. marking table 2. pinning pin description simpli?ed outline graphic symbol 1 base tr1 2 input (base) tr2 3 output (collector) tr2 4 gnd (emitter) tr2 5 collector tr1 6 emitter tr1 13 2 4 5 6 654 1 23 r2 tr1 tr2 r1 006aab506 table 3. ordering information type number package name description version PBLS6024D sc-74 plastic surface-mounted package (tsop6); 6 leads sot457 table 4. marking codes type number marking code PBLS6024D kh
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 3 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit tr1; pnp low v cesat transistor v cbo collector-base voltage open emitter - - 60 v v ceo collector-emitter voltage open base - - 60 v v ebo emitter-base voltage open collector - - 5v i c collector current - - 1.5 a i cm peak collector current single pulse; t p 1ms - - 3a i b base current - - 300 ma i bm peak base current single pulse; t p 1ms - - 1a p tot total power dissipation t amb 25 c [1] - 370 mw [2] - 480 mw [3] - 630 mw tr2; npn resistor-equipped transistor v cbo collector-base voltage open emitter - 50 v v ceo collector-emitter voltage open base - 50 v v ebo emitter-base voltage open collector - 10 v v i input voltage positive - +40 v negative - - 10 v i o output current - 100 ma i cm peak collector current single pulse; t p 1ms - 100 ma p tot total power dissipation t amb 25 c [1] [2] [3] - 200 mw per device p tot total power dissipation t amb 25 c [1] - 480 mw [2] - 590 mw [3] - 760 mw t j junction temperature - 150 c t amb ambient temperature - 55 +150 c t stg storage temperature - 65 +150 c
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 4 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb, mounting pad for collector 1 cm 2 (3) fr4 pcb, standard footprint fig 1. per device: power derating curves t amb ( c) - 75 175 125 25 75 - 25 006aab507 400 600 200 800 1000 p tot (mw) 0 (1) (2) (3) table 6. thermal characteristics symbol parameter conditions min typ max unit per device r th(j-a) thermal resistance from junction to ambient in free air [1] - - 260 k/w [2] - - 211 k/w [3] - - 165 k/w r th(j-sp) thermal resistance from junction to solder point - - 100 k/w
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 5 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch fr4 pcb, standard footprint fig 2. tr1 (pnp): transient thermal impedance from junction to ambient as a function of pulse duration; typical values fr4 pcb, mounting pad for collector 1 cm 2 fig 3. tr1 (pnp): transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab508 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 d = 1 0.75 0.50 0.33 0.10 0.05 0.02 0.01 0 0.20 006aab509 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 d = 1 0.75 0.50 0.33 0.10 0.05 0.02 0.01 0 0.20
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 6 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch 7. characteristics ceramic pcb, al 2 o 3 , standard footprint fig 4. tr1 (pnp): transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab510 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 d = 1 0.75 0.50 0.33 0.10 0.05 0.02 0.01 0.20 0 table 7. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit tr1; pnp low v cesat transistor i cbo collector-base cut-off current v cb = - 60 v; i e =0a - - - 100 na v cb = - 60 v; i e =0a; t j = 150 c -- - 50 m a i ces collector-emitter cut-off current v ce = - 48 v; v be =0a - - - 100 na i ebo emitter-base cut-off current v eb = - 5 v; i c =0a - - - 100 na h fe dc current gain v ce = - 2 v; i c = - 100 ma 180 285 - v ce = - 2 v; i c = - 500 ma [1] 150 255 - v ce = - 2 v; i c = - 1a [1] 140 210 - v ce = - 2 v; i c = - 1.5 a [1] 120 185 - v cesat collector-emitter saturation voltage i c = - 0.5 a; i b = - 50 ma [1] - - 65 - 100 mv i c = - 1 a; i b = - 50 ma [1] - - 130 - 200 mv i c = - 1 a; i b = - 100 ma [1] - - 110 - 170 mv i c = - 1.5 a; i b = - 100 ma [1] - - 165 - 260 mv r cesat collector-emitter saturation resistance i c = - 1 a; i b = - 100 ma [1] - 110 170 m w i c = - 1.5 a; i b = - 100 ma [1] - 110 175 m w v besat base-emitter saturation voltage i c = - 0.5 a; i b = - 50 ma [1] - - 0.85 - 1v i c = - 1.5 a; i b = - 100 ma [1] - - 0.93 - 1.1 v
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 7 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch [1] pulse test: t p 300 m s; d 0.02. v beon base-emitter turn-on voltage v ce = - 10 v; i c = - 1a [1] - - 0.75 - 1.1 v t d delay time v cc = - 10 v; i c = - 1a; i bon = - 50 ma; i boff =50ma -17-ns t r rise time - 38 - ns t on turn-on time - 55 - ns t s storage time - 350 - ns t f fall time - 65 - ns t off turn-off time - 415 - ns f t transition frequency i c = - 50 ma; v ce = - 10 v; f = 100 mhz - 150 - mhz c c collector capacitance v cb = - 10 v; i e =i e =0a; f=1mhz -30-pf tr2; npn resistor-equipped transistor i cbo collector-base cut-off current v cb =50v; i e = 0 a - - 100 na i ceo collector-emitter cut-off current v ce =30v; i b =0a --1 m a v ce =30v; i b =0a; t j = 150 c --50 m a i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 180 m a h fe dc current gain v ce =5v; i c = 5 ma 60 - - v cesat collector-emitter saturation voltage i c = 10 ma; i b = 0.5 ma - - 150 mv v i(off) off-state input voltage v ce =5v; i c = 100 m a - 1.1 0.8 v v i(on) on-state input voltage v ce = 0.3 v; i c = 5 ma 2.5 1.7 - v r1 bias resistor 1 (input) 15.4 22 28.6 k w r2/r1 bias resistor ratio 0.8 1 1.2 c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz - - 2.5 pf table 7. characteristics continued t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 8 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch v ce = - 2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c fig 5. tr1 (pnp): dc current gain as a function of collector current; typical values fig 6. tr1 (pnp): collector current as a function of collector-emitter voltage; typical values v ce = - 2v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 7. tr1 (pnp): base-emitter voltage as a function of collector current; typical values fig 8. tr1 (pnp): base-emitter saturation voltage as a function of collector current; typical values 006aab523 200 400 600 h fe 0 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) v ce (v) 0.0 - 2.0 - 1.5 - 0.5 - 1.0 006aab524 - 1 - 2 - 3 i c (a) 0 i b (ma) = - 30 - 27 - 21 - 18 - 15 - 12 - 9 - 24 - 6 - 3 006aab525 - 0.6 - 0.8 - 0.4 - 1.0 - 1.2 v be (v) - 0.2 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 006aab526 - 0.6 - 0.8 - 0.4 - 1.0 - 1.2 v besat (v) - 0.2 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3)
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 9 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 9. tr1 (pnp): collector-emitter saturation voltage as a function of collector current; typical values fig 10. tr1 (pnp): collector-emitter saturation voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 11. tr1 (pnp): collector-emitter saturation resistance as a function of collector current; typical values fig 12. tr1 (pnp): collector-emitter saturation resistance as a function of collector current; typical values 006aab527 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 10 - 1 - 1 v cesat (v) - 10 - 2 (1) (2) (3) 006aab528 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 10 - 1 - 1 v cesat (v) - 10 - 2 (1) (2) (3) i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 006aab529 1 10 - 1 10 2 10 10 3 r cesat ( w ) 10 - 2 (1) (2) (3) i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 006aab530 1 10 - 1 10 2 10 10 3 r cesat ( w ) 10 - 2 (1) (2) (3)
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 10 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch v ce =5v (1) t amb = 150 c (2) t amb =25 c (3) t amb = - 40 c fig 13. tr2 (npn): dc current gain as a function of collector current; typical values v ce = 0.3 v (1) t amb = - 40 c (2) t amb =25 c (3) t amb = 100 c v ce =5v (1) t amb = - 40 c (2) t amb =25 c (3) t amb = 100 c fig 14. tr2 (npn): on-state input voltage as a function of collector current; typical values fig 15. tr2 (npn): off-state input voltage as a function of collector current; typical values i c (ma) 10 - 1 10 2 10 1 006aaa038 10 2 10 10 3 h fe 1 (1) (2) (3) 006aaa040 i c (ma) 10 - 1 10 2 10 1 1 10 v i(on) (v) 10 - 1 (1) (2) (3) 006aaa041 i c (ma) 10 - 2 10 1 1 10 - 1 1 10 v i(off) (v) 10 - 1 (1) (3) (2)
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 11 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c i c /i b = 70; t amb =25 c fig 16. tr2 (npn): collector-emitter saturation voltage as a function of collector current; typical values fig 17. tr2 (npn): collector-emitter saturation voltage as a function of collector current; typical values 006aaa039 i c (ma) 110 2 10 10 - 1 v cesat (v) 10 - 2 (1) (2) (3) i c (ma) 110 2 10 006aab522 10 - 1 1 v cesat (v) 10 - 2
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 12 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch 8. test information 8.1 quality information this product has been quali?ed in accordance with the automotive electronics council (aec) standard q101 - stress test quali?cation for discrete semiconductors , and is suitable for use in automotive applications. fig 18. tr1: biss transistor switching time de?nition v cc = - 10 v; i c = - 1 a; i bon = - 50 ma; i boff =50ma fig 19. tr1: test circuit for switching times 006aaa266 - i bon (100 %) - i b input pulse (idealized waveform) - i boff 90 % 10 % - i c (100 %) - i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mgd624 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 13 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 13 . [2] t1: normal taping [3] t2: reverse taping fig 20. package outline sot457 (sc-74) 04-11-08 dimensions in mm 3.0 2.5 1.7 1.3 3.1 2.7 pin 1 index 1.9 0.26 0.10 0.40 0.25 0.95 1.1 0.9 0.6 0.2 13 2 4 5 6 table 8. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 PBLS6024D sot457 4 mm pitch, 8 mm tape and reel; t1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; t2 [3] -125 -165
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 14 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch 11. revision history table 9. revision history document id release date data sheet status change notice supersedes PBLS6024D_1 20090814 product data sheet - -
PBLS6024D_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 14 august 2009 15 of 16 nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors PBLS6024D 60 v, 1.5 a pnp biss loadswitch ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 14 august 2009 document identifier: PBLS6024D_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 12 8.1 quality information . . . . . . . . . . . . . . . . . . . . . 12 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 10 packing information. . . . . . . . . . . . . . . . . . . . . 13 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 15 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13 contact information. . . . . . . . . . . . . . . . . . . . . 15 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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